Product Summary
The BAT82 is a Schottky barrier diode with an integrated protection ring against static discharges, encapsulated in a hermetically-sealed subminiature SOD68 (DO-34) package. The diode is suitable for mounting on a 2 E (5.08 mm) pitch. The applications of the BAT82 include Ultra high-speed switching, Voltage clamping, Protection circuits, Blocking diodes.
Parametrics
BAT82 absolute maximum ratings: (1)continuous reverse voltage, VR: 50 V; (2)continuous forward current, IF: 30 mA; (3)repetitive peak forward current tp≤1s;δ≤0.5, IFRM: 150 mA; (4)non-repetitive peak forward current tp≤10 ms, IFSM: 500 mA; (5)storage temperature, Tstg: -65 to 150℃; (6)junction temperature, Tj: 125℃.
Features
BAT82 features: (1)Low forward voltage; (2)High breakdown voltage; (3)Guard ring protected; (4)Hermetically-sealed leaded glass package; (5)Low diode capacitance.
Diagrams
<IMG border=0 alt="BAT82 block diagram" src="http://www.seekic.com/uploadfile/ic-mfg/20121029146481.jpg">
Image | Part No | Mfg | Description | ![]() |
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![]() BAT82 |
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![]() BAT82S |
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![]() Negotiable |
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![]() BAT82S-TR |
![]() Vishay Semiconductors |
![]() Schottky (Diodes & Rectifiers) 150mA 50 Volt 500mA IFSM |
![]() Data Sheet |
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![]() BAT82S-TAP |
![]() Vishay Semiconductors |
![]() Schottky (Diodes & Rectifiers) 150mA 50 Volt 500mA IFSM |
![]() Data Sheet |
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