(China (Mainland))
Product Summary
The BT300S-600R is a Glass passivated thyristor. The BT300S-600R in a plastic envelope, suitable for surface mounting, intended for use in mounting, intended for use in mounting, intended for use in mounting, intended for use in performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching.
Parametrics
BT300S-600R absolute maximum ratings: (1)Repetitive peak off-state voltages, VDRM, VRRM: 500 to 800 V; (2)Average on-state current, half sine wave; Tmb ≤ 107℃, IT(AV): 5A; (3)RMS on-state current, all conduction angles, IT(RMS): 8 A; (4)Non-repetitive peak half sine wave; Tj = 25℃ prior to; (5)on-state current surge, t = 10 ms, ITSM: 65 A; t = 8.3 ms, ITSM: 71 A; (6)I2t for fusing, t = 10 ms, I2t: 21 A2s; (7)Repetitive rate of rise of on-state current after triggering, dIT/dt: 50 A/μs; (8)Peak gate current, IGM: 2 A; (9)Peak gate voltage, VGM: 5 V; (10)Peak reverse gate voltage, VRGM: 5 V; (11)Peak gate power, PGM: 5 W; (12)Average gate power over any 20 ms period, PG(AV): 0.5 W; (13)Storage temperature, Tstg: -40 to 150℃; (14)Operating junction temperature, Tj: 125℃.
Features
BT300S-600R features: (1)Gate trigger current, VD = 12 V; IT = 0.1 A, IGT: 2 to 15 mA; (2)Latching current, VD = 12 V; IGT = 0.1 A, IL: 10 to 40 mA; (3)Holding current, VD = 12 V; IGT = 0.1 A, IH: 10 to 20 mA; (4)On-state voltage, IT = 12 A, VT : 1.35 to 1.6 V; (5)Gate trigger voltage, VD = 12 V; IT = 0.1 A, VGT: 0.6 to 1.5 V; VD = VDRM(max); IT = 0.1 A; Tj = 125℃, VGT: 0.25 to 0.4V; (6)Off-state leakage current VD = VDRM(max); VR = VRRM(max); Tj = 125℃, ID, IR: 0.1 to 0.5 mA.
Diagrams
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 BT300S-600R /T3 |
NXP Semiconductors |
SCRs TAPE13 SCR |
Data Sheet |
Negotiable |
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BT300S-600R,118 |
NXP Semiconductors |
SCRs TAPE13 SCR |
Data Sheet |
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