Product Summary

The KSE13005H2TU is a NPN silicon transistor. It is suitable for high voltage switch mode application. Its package is TO220.

Parametrics

Absolute maximum ratings: (1)VCBO, Collector-Base Voltage: 700V; (2)VCEO, Collector-Emitter Voltage: 400V; (3)VEBO, Emitter-Base Voltage: 9V; (4)IC, Collector Current (DC): 4A; (5)ICP, Collector Current (Pulse): 8A; (6)IB, Base Current: 2A; (7)PC, Collector Dissipation (TC=25℃): 75W; (8)TJ, Junction Temperature: 150℃; (9)TSTG, Storage Temperature: - 65 ~ 150℃.

Features

Electrical characteristics: (1)BVCEO(sus), Collector-Emitter Sustaining Voltage: 400V min when IC = 10mA, IB = 0 300; (2)IEBO, Emitter Cut-off Current: 1mA max VEB = 9V, IC = 0 1 mA; (3)hFE, DC Current Gain: 10 to 60 when VCE = 5V, IC = 1A; 8 to 40 when VCE = 5V, IC = 2A; (4)Cob, Output Capacitance: 65pF typ when VCB = 10V,f=0.1MHz; (5)fT, Current Gain Bandwidth Product: 4MHz min when VCE=10V, IC = 0.5A.

Diagrams

KSE13003AS
KSE13003AS

Fairchild Semiconductor

Transistors Bipolar (BJT) NPN Si Transistor

Data Sheet

Negotiable 
KSE13003H2ASTU
KSE13003H2ASTU

Fairchild Semiconductor

Transistors Bipolar (BJT) NPN Si Transistor

Data Sheet

0-1: $0.22
1-25: $0.19
25-100: $0.14
100-250: $0.11
KSE13003TH1ATU
KSE13003TH1ATU

Fairchild Semiconductor

Transistors Bipolar (BJT) NPN Si Transistor

Data Sheet

0-1: $0.33
1-25: $0.25
25-100: $0.20
100-250: $0.17
KSE13005H1A
KSE13005H1A

Fairchild Semiconductor

Transistors Bipolar (BJT) NPN Si Transistor

Data Sheet

Negotiable 
KSE13005FH2TU
KSE13005FH2TU

Fairchild Semiconductor

Transistors Bipolar (BJT)

Data Sheet

Negotiable 
KSE13005FH1TU
KSE13005FH1TU

Fairchild Semiconductor

Transistors Bipolar (BJT)

Data Sheet

Negotiable