(China (Mainland))
Product Summary
The KSE13005H2TU is a NPN silicon transistor. It is suitable for high voltage switch mode application. Its package is TO220.
Parametrics
Absolute maximum ratings: (1)VCBO, Collector-Base Voltage: 700V; (2)VCEO, Collector-Emitter Voltage: 400V; (3)VEBO, Emitter-Base Voltage: 9V; (4)IC, Collector Current (DC): 4A; (5)ICP, Collector Current (Pulse): 8A; (6)IB, Base Current: 2A; (7)PC, Collector Dissipation (TC=25℃): 75W; (8)TJ, Junction Temperature: 150℃; (9)TSTG, Storage Temperature: - 65 ~ 150℃.
Features
Electrical characteristics: (1)BVCEO(sus), Collector-Emitter Sustaining Voltage: 400V min when IC = 10mA, IB = 0 300; (2)IEBO, Emitter Cut-off Current: 1mA max VEB = 9V, IC = 0 1 mA; (3)hFE, DC Current Gain: 10 to 60 when VCE = 5V, IC = 1A; 8 to 40 when VCE = 5V, IC = 2A; (4)Cob, Output Capacitance: 65pF typ when VCB = 10V,f=0.1MHz; (5)fT, Current Gain Bandwidth Product: 4MHz min when VCE=10V, IC = 0.5A.
Diagrams
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Negotiable |
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KSE13003 |
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Data Sheet |
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KSE13003AS |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Si Transistor |
Data Sheet |
Negotiable |
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KSE13003H1AS |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Si Transistor |
Data Sheet |
Negotiable |
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KSE13003H1ASTU |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Si Transistor |
Data Sheet |
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KSE13003H2AS |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Si Transistor |
Data Sheet |
Negotiable |
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