Product Summary

The SKIIP30NAB12T10 is a 3-phase bridge inverter.

Parametrics

SKIIP30NAB12T10 absolute maximum ratings: (1)Vces: 1200 V; (2)Vges: ±20 V; (3)lc Theatsink = 25/80 ℃: 45/30 A; (4)I CM tp < 1 ms; Theatsink = 25 / 80 ℃: 90/60 A; (5)If = -lc Theatsink = 25 / 80 ℃: 38/26 A; (6)IFM = -ICM tp < 1 ms; Theatsink = 25 / 80 C: 76/52 A; (7)Vrrm: 1500 V; (8)&#8226;d Theatsink - |80 ℃: 35 A; (9)Ifsm tp = 10 ms; sin. 180 °, Tj = 25 ℃: 700 A; (10)l2t tp= 10 ms; sin. 180 °, Tj = 25 ℃: 2400 A2s; (11)Tj: -40 : + 150 ℃; (12)Tstg: -40 + 125 ℃; (13)Visol AC, 1 min.: 2500 V.

Features

SKIIP30NAB12T10 features: (1)VcEsat lc = 30 A Tj = 25 (125)℃: 3,0(3,7)V; (2)td(on)VCc = 600 V; VGE = ± 15 V lc = 30 A; Tj = 125 ℃ ~ Rgon = Rgoff = 39 L2 Jnductive load: 110ns; (3)tr VCc = 600 V; VGE = ± 15 V lc = 30 A; Tj = 125 ℃ ~ Rgon = Rgoff = 39 L2 Jnductive load: 110ns; (4)td(off)VCc = 600 V; VGE = ± 15 V lc = 30 A; Tj = 125 ℃ ~ Rgon = Rgoff = 39 L2 Jnductive load: 600ns; (5)tf VCc = 600 V; VGE = ± 15 V lc = 30 A; Tj = 125 ℃ ~ Rgon = Rgoff = 39 L2 Jnductive load: 90ns; (6)Eon + Eoff VCc = 600 V; VGE = ± 15 V lc = 30 A; Tj = 125 ℃ ~ Rgon = Rgoff = 39 L2 Jnductive load: 7.8mJ; (7)Cies Vce = 25 V; Vge = 0 V, 1 MHz: 2.0nf; (8)Rthjh per IGBT: 0.7K/W.

Diagrams

SKIIP30NAB12T10 block diagram

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