(China (Mainland))
Product Summary
The 4N60L is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. The 4N60L is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
Parametrics
4N60L absolute maximum ratings: (1)Drain-Source Voltage, VDSS: 600 V; (2)Gate-Source Voltage, VGSS: ±30 V; (3)Avalanche Current, IAR: 4.4 A; (4)Continuous Drain Current, TC= 25℃, ID: 4.0 A; TC= 100℃, ID: 2.8 A; (5)Pulsed Drain Current, TPLimited by TJMAX, IDM: 16 A; (6)Avalanche Energy, Single Pulsed, EAS: 260 mJ; (7)Avalanche Energy, Repetitive, Limited by TJMAX, EAR: 10.6 mJ; (8)Peak Diode Recovery dv/dt, dv/dt: 4.5 V/ns; (9)Power Dissipation (TC= 25℃), PD: 106 W; (10)Junction Temperature, TJ: +150℃; (11)Storage Temperature, TSTG: -55 to +150℃.
Features
4N60L features: (1)RDS(ON)= 2.5Ω @VGS= 10 V; (2)Ultra low gate charge (typical 15 nC ); (3)Low reverse transfer Capacitance (CRSS= typical 8.0 pF ); (4)Fast switching capability; (5)Avalanche energy Specified; (6)Improved dv/dt capability, high ruggedness.
Diagrams
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 4N600 |
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Data Sheet |
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