Product Summary

The SSM3J14T is a Field Effect Transistor.

Parametrics

SSM3J14T absolute maximum ratings: (1)Drain-Source voltage, VDS: -30 V; (2)Gate-Source voltage, VGSS: -20 V; (3)Drain current, DC, ID: -2.7A; Pulse, IDP: -5.4A; (4)Drain power dissipation, PD, t = 10 s: 1.25W; 0.7W; (5)Channel temperature, Tch: 150℃; (6)Storage temperature range, Tstg: -55 to 150℃.

Features

SSM3J14T features: (1)Suitable for high-density mounting due to compact package; (2)Low on Resistance : Ron = 145 mΩ (max) (@VGS = -4.5 V); Ron = 85 mΩ (max) (@VGS = -10 V); (3)High-speed switching.

Diagrams

SSM3J14T block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
SSM3J14T
SSM3J14T
Other

Data Sheet
Negotiable 
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(USD)		 Quantity
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Data Sheet
0-1: $3.55
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250-500: $2.11
500-1000: $1.78
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100-250: $2.42
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Data Sheet
0-2500: $1.69
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