Product Summary

The IMN10-T108 is a Switching diode. The application of the IMN10-T108 includes Ultra high speed switching.

Parametrics

IMN10-T108 absolute maximum ratings: (1)Peak reverse voltage, VRM: 80V; (2)DC reverse voltage, VR: 80V; (3)Peak forward current, IFM: 300mA; (4)Mean rectifying current, IO: 100mA; (5)Surge current (1μs), Isurge: 4A; (6)Power dissipation (TOTAL), Pd: 300mW; (7)Junction temperature, Tj: 150℃; (8)Storage temperature, Tstg: -55 to +150℃.

Features

IMN10-T108 features: (1)A wide variety of configurations are available (UMD5, UMD6, SMD5, SMD6); (2)Multiple diodes in one small surface mount package; (3)Diode characteristics are matched in the package.

Diagrams

IMN10-T108 circuit diagram

IMN10
IMN10
Other

Data Sheet
Negotiable 
IMN10T108
IMN10T108
ROHM Semiconductor
Diodes (General Purpose, Power, Switching) SWITCH 80V 100MA SOT-457
Data Sheet
0-1: $0.32
1-25: $0.24
25-100: $0.18
100-500: $0.11
IMN11
IMN11
Other

Data Sheet
Negotiable 
IMN11T110
IMN11T110
ROHM Semiconductor
Diodes (General Purpose, Power, Switching) SW 80V 100MA SOT-457
Data Sheet
0-3000: $0.09
3000-6000: $0.08
6000-12000: $0.07
IMN15124C
IMN15124C
Crouzet
Proximity Sensors IPD M12 4MM NONSHLD 3W NPN NO 2M C
Data Sheet
0-10: $35.53
10-25: $33.82
25-50: $32.32
50-100: $31.45