(China (Mainland))
Product Summary
The TC7S00FU/F.1 is a high speed CMOS 2-INPUT NAND GATE fabricated with silicon gate CMOS technology. The TC7S00FU/F.1 achieves high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output. All inputs are equipped with protection circuits against static discharge or transient excess voltage.
Parametrics
TC7S00FU/F.1 absolute maximum ratings: (1)Supply Voltage Range, VCC: -0.5 to 7V; (2)DC Input Voltage, VIN: -0.5 to VCC +0.5V; (3)DC Output Voltage, VOUT: -0.5 to VCC +0.5V; (4)Input Diode Current, IIK: ±20mA; (5)Output Diode Current, IOK: ±20mA; (6)DC Output Current, IOUT: ±12.5mA; (7)DC Vcc/Ground Current, ICC: ±25mA; (8)Power Dissipation, PD: 200mW; (9)Storage Temperature, Tstg: -65 to 150℃; (10)Lead Temperature (10s), TL: 260℃.
Features
TC7S00FU/F.1 features: (1)High Speed, Tpd = 7ns (Typ.) at VCC = 5V; (2)Low Power Dissipation, Icc= 1μA (Max.) at Ta = 25℃; (3)High Noise Immunity, VNIH= VNIL= 28% Vcc (Min.); (4)Output Drive Capability, 5 LSTTL Loads; (5)Symmetrical Output Impedance, IOH= IOL= 2mA (Min.); (6)Balanced Propagation Delays, tpLH= tpHL; (7)Wide Operating Voltage Range, Vcc(opr)= 2 to 6V.
Diagrams
<IMG border=0 alt="TC7S00FU/F.1 block diagram" src="http://www.seekic.com/uploadfile/ic-mfg/2012102935912381.jpg">
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IC GATE NAND 2INP 74HC00 5-SSOP |
Data Sheet |
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Negotiable |
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Toshiba |
Gates (AND / NAND / OR / NOR) 2-Input NAND Gate 5Pin High Speed |
Data Sheet |
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TC7S00FT5LFT |
Toshiba |
Gates (AND / NAND / OR / NOR) 2-Input NAND Gate 5Pin High Speed |
Data Sheet |
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TC7S00FUT5LFT |
Toshiba |
Gates (AND / NAND / OR / NOR) 2-Input NAND Gate 5Pin High Speed |
Data Sheet |
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.JPG "TC7S02F(T5L,F,T)") |
TC7S02F(T5L,F,T) |
Toshiba (VA) |
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Data Sheet |
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